Modification of birefringence properties of nanostructured silicon with a change in the level of substrate doping with boron

Journal Article · Sun Jul 15 00:00:00 EDT 2007 · Crystallography Reports

DOI:https://doi.org/10.1134/S1063774507040165· OSTI ID:21090882

Zabotnov, S V; Mamichev, D A; Golovan', L A; Timoshenko, V Yu; Kashkarov, P K ^[1]

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1. Moscow State University (Russian Federation)

Birefringence of porous-silicon films prepared by electrochemical etching of boron-doped Si(110) wafers with a resistivity of 25-45 m{theta} cm has been studied. The samples are found to exhibit the properties of a negative uniaxial crystal with the optical axis oriented along the [11-bar0] crystallographic direction. The possibility of using porous-silicon films as phase plates for light-polarization control in the near and mid-IR ranges is demonstrated.

• OSTI ID: 21090882
• Journal Information: Crystallography Reports, Vol. 52, Issue 4; Other Information: DOI: 10.1134/S1063774507040165; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Inc; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7745
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BIREFRINGENCE
BORON
CRYSTALLOGRAPHY
DOPED MATERIALS
ELECTROCHEMISTRY
ETCHING
FILMS
NANOSTRUCTURES
POROUS MATERIALS
SILICON