Alternating current conductivity of anisotropically nanostructured silicon

Journal Article · Sat Apr 15 00:00:00 EDT 2006 · Semiconductors

DOI:https://doi.org/10.1134/S106378260604018X· OSTI ID:21088556

Martyshov, M N; Timoshenko, V Yu; Kashkarov, P K ^[1]

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1. Moscow State University (Russian Federation)

The frequency dependences of the conductivity and capacitance of anisotropic porous silicon prepared by electrochemical etching of single-crystal p-Si (110) wafers were studied. It was found that the conductivity in the direction of the largest size of silicon nanocrystals is much higher than in the direction of their smallest size in the entire frequency (5 Hz-13 MHz) and temperature (170-370 K) ranges under study. An analysis of experimental data showed that the major cause of the electrical transport anisotropy is the anisotropy of silicon nanocrystals forming the samples of porous silicon under study.

• OSTI ID: 21088556
• Journal Information: Semiconductors, Vol. 40, Issue 4; Other Information: DOI: 10.1134/S106378260604018X; Copyright (c) 2006 Nauka/Interperiodica; Article Copyright (c) 2006 Pleiades Publishing, Inc; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALTERNATING CURRENT
ANISOTROPY
CAPACITANCE
CHARGED-PARTICLE TRANSPORT
ELECTROCHEMISTRY
ETCHING
FREQUENCY DEPENDENCE
HZ RANGE
MHZ RANGE 01-100
MONOCRYSTALS
NANOSTRUCTURES
POROUS MATERIALS
SILICON