Study of the relationship between the crystal structure of nanolayers and electrical properties in Al{sub x}Ga{sub 1-x}As/In{sub y}Ga{sub 1-y}As pseudobinary heterostructures by double-crystal X-ray diffraction

Journal Article · Sat Mar 15 00:00:00 EDT 2008 · Crystallography Reports

DOI:https://doi.org/10.1007/S11445-008-2003-5· OSTI ID:21090618

Subbotin, I A ^[1]; Galiev, G B ^[2]

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1. Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)
2. Russian Academy of Sciences, Institute of UHF Semiconductor Electronics (Russian Federation)

The structural parameters of individual layers of samples of a Al{sub x}Ga{sub 1-x}As/In{sub y}Ga{sub 1-y}As/GaAs pseudomorphic heterostructure have been determined by double-crystal X-ray diffraction. A relationship of the technological parameters of fabrication of heterostructures with their structural and electrical properties is established. The increase in the mobility of the 2D electron gas in the samples under study, caused by the increase in the growth temperature of the Al{sub x}Ga{sub 1-x}As spacer layer and the decrease in the time of silicon {delta} doping from the two sides of the quantum well, correlates well with the degree of the sample structural quality.

• OSTI ID: 21090618
• Journal Information: Crystallography Reports, Vol. 53, Issue 2; Other Information: DOI: 10.1007/s11445-008-2003-5; Copyright (c) 2008 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7745
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
CRYSTAL STRUCTURE
CRYSTALS
ELECTRICAL PROPERTIES
ELECTRON GAS
FABRICATION
GALLIUM ARSENIDES
LAYERS
MOBILITY
QUANTUM WELLS
SILICON
X-RAY DIFFRACTION