Effect of irradiation temperature on the efficiency of introduction of multivacancy defects into n-Si crystals
The n-Si single crystals are studied in order to gain insight into the effect of the temperature of irradiation T{sub irr} on the defect-production process. The samples under study were irradiated with 2-MeV electrons in the range T{sub irr} = 20-400 deg. C. Irradiated crystals were annealed isochronously in the temperature range from 80 to 600 deg. C. Measurements were carried out by the Hall method in the temperature range from 77 to 300 K. It is shown that the efficiency of introduction of radiation defects with a high thermal stability (T{sub ann} {>=} 350 deg. C) attains a maximum at T{sub irr} = 150 deg. C. The observed effect is accounted for by formation of multivacancy defects PV{sub 2} on the basis of ionized E centers and nonequilibrium vacancies.
- OSTI ID:
- 21088497
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 8 Vol. 40; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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