Special features of annealing of radiation defects in irradiated p-Si crystals
p-Si single crystals grown by the Czochralski method were studied; the hole concentration in these crystals was p = 6 x 10{sup 13} cm{sup -3}. The samples were irradiated with 8-MeV electrons at 300 K and were then annealed isochronously in the temperature range T{sub ann} = 100-500 deg. C. The studies were carried out using the Hall method in the temperature range of 77-300 K. It is shown that annealing of divacancies occurs via their transformation into the B{sub s}V{sub 2} complexes. This complex introduces the energy level located at E{sub v} + 0.22 eV into the band gap and is annealed out in the temperature range of 360-440 deg. C. It is assumed that defects with the level E{sub v} + 0.2 eV that anneal out in the temperature range T{sub ann} = 340-450 deg. C are multicomponent complexes and contain the atoms of the doping and background impurities.
- OSTI ID:
- 21088052
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 6 Vol. 41; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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