The influence of the energy of photoexcitation in the course of electron irradiation on defect formation in n-Si crystals
- Georgian Technical University, Republican Center for Structural Studies (Georgia)
Effect of illumination of n-Si crystals in the course of irradiation with electrons on the nature of radiation defects is studied. The samples irradiated with 2-MeV electrons were subjected to isochronous annealing in the temperature range from 200 to 600 deg. C. After each 20-min cycle of annealing, the electron concentration was measured by the Hall method in the temperature range 77-300 K. It is shown that, if the E centers are excited during irradiation with photons with the energy h{nu} = 0.44 eV (the wavelength {lambda} = 2.8 {mu}m), divacancy phosphorus-containing defects of the PV{sub 2} type are formed in the n-Si crystals, which leads to an increase in the radiation resistance of the crystals under study. If negative vacancies V{sup -} are excited with photons with the energy h{nu} = 0.28 eV ({lambda} = 4.4 {mu}m), the total number of radiation defects increases by a factor of 1.2.
- OSTI ID:
- 21260353
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 6 Vol. 43; ISSN 1063-7826; ISSN SMICES
- Country of Publication:
- United States
- Language:
- English
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