Accumulation of structural defects in silicon irradiated with PF{sub n}{sup +} cluster ions with medium energies

Journal Article · Mon Jan 15 04:00:00 EST 2007 · Semiconductors

DOI:https://doi.org/10.1134/S1063782607010022· OSTI ID:21088468

Titov, A I ^[1]

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1. St. Petersburg State Polytechnical University (Russian Federation)

The method of Rutherford backscattering spectrometry in combination with channeling is used to study the accumulation of structural defects in silicon at room temperature as a result of irradiation with P{sup +} and F{sup +} atomic ions and also with cluster PF{sub n}{sup +} ions (n = 1, ..., 4) with the energy of 2.1 keV/amu and with identical generation rate of primary defects. The conditions for correct comparison of the results of bombardment with atomic and cluster ions composed of atoms of various types are suggested. It is found that the characteristics of accumulation of structural defects in silicon in the case of bombardment with PF{sub n}{sup +} cluster ions differ widely from those under irradiation with both atomic ions that are involved in the cluster ion (P{sup +} and F{sup +}) and with atomic heavy ions that have atomic mass close to that of the mass of a PF{sub n}{sup +} cluster. It is shown that, with irradiation conditions being the same, cluster ions produce much more radiation defects in the surface region than do atomic ions; i.e., a molecular effect is observed. Plausible mechanisms of this phenomenon are considered.

• OSTI ID: 21088468
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 1 Vol. 41; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMIC IONS
CRYSTAL DEFECTS
FLUORINE IONS
HEAVY IONS
ION PAIRS
IRRADIATION
KEV RANGE 01-10
PHOSPHORUS IONS
PHYSICAL RADIATION EFFECTS
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SILICON
SURFACES
TEMPERATURE RANGE 0273-0400 K