Effect of the density of collision cascades on ion implantation damage in ZnO

Journal Article · Mon Oct 15 04:00:00 EDT 2007 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2801404· OSTI ID:21064409

Azarov, A Yu; Kucheyev, S O; Titov, A I; Karaseov, P A ^[1]

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1. Department of Physical Electronics, St. Petersburg State Polytechnic University, St. Petersburg 195251 (Russian Federation)

We study structural disorder in ZnO bombarded at room temperature with 1.3 keV/amu atomic P and cluster PF{sub n} (n=2 and 4) ions. Rutherford backscattering/channeling spectrometry results show that the density of collision cascades has a negligible effect on the damage buildup in the crystal bulk in the dose range resulting in {approx}1.5-15 displacements per atom. Hence, the amount of stable post-implantation disorder in the bulk can be predicted based on ballistic calculations. In contrast, the cascade density affects radiation damage in the near-surface region. An intermediate defect peak between the expected surface and bulk peaks of disorder forms for ion irradiation conditions with dense cascades.

• OSTI ID: 21064409
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 8 Vol. 102; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMIC DISPLACEMENTS
CHANNELING
CRYSTAL DEFECTS
DAMAGE
ION COLLISIONS
ION IMPLANTATION
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SEMICONDUCTOR MATERIALS
TEMPERATURE RANGE 0273-0400 K
ZINC OXIDES