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Effects of the density of collision cascades: Separating contributions from dynamic annealing and energy spikes

Conference ·
; ; ;
We present a quantitative model for the efficiency of the molecular effect in damage buildup in semiconductors. Our model takes into account only one mechanism of the cascade density dependence: nonlinear energy spikes. In our three-dimensional analysis, the volume of each individual collision cascade is divided into small cubic cells, and the number of cells that have an average density of displacements above some threshold value is calculated. We assume that such cells experience a catastrophic crystalline-to-amorphous phase transition, while defects in the cells with lower displacement densities have perfect annihilation. For the two limiting cases of heavy (500 keV/atom {sup 209}Bi) and light (40 keV/atom {sup 14}N) ion bombardment of Si, theory predictions are in good agreement with experimental data for a threshold displacement density of 4.5 at.%. For intermediate density cascades produced by small 2.1 keV/amu PF{sub n} clusters, we show that dynamic annealing processes entirely dominate cascade density effects for PF{sub 2} ions, while energy spikes begin contributing in the case of PF{sub 4} cluster bombardment.
Research Organization:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA
Sponsoring Organization:
USDOE
DOE Contract Number:
W-7405-ENG-48
OSTI ID:
945584
Report Number(s):
LLNL-PROC-406296
Country of Publication:
United States
Language:
English

References (10)

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Damage buildup and the molecular effect in Si bombarded with PFn cluster ions
  • Titov, A. I.; Azarov, A. Yu.; Nikulina, L. M.
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 256, Issue 1 https://doi.org/10.1016/j.nimb.2006.12.004
journal March 2007
Effect of the density of collision cascades on implantation damage in GaN journal April 2001
Radiation Damage in Ge and Si Detected by Carrier Lifetime Changes: Damage Thresholds journal July 1958
Damage buildup in Si under bombardment with MeV heavy atomic and molecular ions journal October 2001
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Energy spike effects in ion-bombarded GaN journal April 2009

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Related Subjects

36 MATERIALS SCIENCE
ANNEALING
ANNIHILATION
BUILDUP
DEFECTS
EFFICIENCY