Dislocation-related luminescence in silicon, caused by implantation of oxygen ions and subsequent annealing
- Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
Multiple implantation of oxygen ions with energies of 0.1-1.5 MeV at doses of 7 x 10{sup 13}-2 x 10{sup 14} cm{sup -2} and subsequent annealing in a chlorine-containing atmosphere at 900 deg. C for 4 h give rise to dislocation-related luminescence in p-Si. A p {sup {yields}} n conductivity-type conversion is also observed in this case in the surface layer of Si, which indicates that electrically active donor centers are formed in the process. Preliminary heat treatment of wafers covered with an erbium-doped film of tetraethoxysilane (TEOS) in argon at 1250 deg. C for 1 h does not preclude the appearance of dislocation-related luminescence, but affects the parameters of the dislocation-related lines (peak positions and intensities)
- OSTI ID:
- 21088105
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 3 Vol. 41; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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