IBIC characterization of charge transport in CdTe:Cl
- University of Surrey, Department of Physics (United Kingdom)
Studies of charge transport uniformity in bulk CdTe:Cl have been carried out using ion-beam-induced charge (IBIC) imaging. High resolution maps of charge collection efficiency, mobility-lifetime product ({mu}{tau}), and drift mobility ({mu}) were measured using a scanning microbeam of 2 MeV protons focused to a beam diameter of {approx}3 {mu}m. Excellent charge transport uniformity was observed in single crystal CdTe:Cl, with electron {mu}{tau} values of up to 5 x 10{sup -3} cm{sup 2}/V s. The presence of extended defects such as tellurium inclusions was also studied using IBIC, and their influence on the charge transport performance of CdTe detector structures is discussed.
- OSTI ID:
- 21088090
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 4 Vol. 41; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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