Charge carrier transport in Ge{sub 20}As{sub 20}S{sub 60} chalcogenide semiconductor films
- Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
- Bulgarian Academy of Sciences, Institute of Solid State Physics (Bulgaria)
- St. Petersburg State Forest Technical Academy (Russian Federation)
Charge-carrier transport in Ge{sub 20}As{sub 20}S{sub 60} films has been studied using the transit time method under low-injection conditions at room temperature. It was found that drift mobilities of electrons and holes in Ge{sub 20}As{sub 20}S{sub 60} films are close to each other, i.e., {mu}{sub e} {approx} {mu}{sub h} {approx} 2 x 10{sup -3} cm{sup 2} V{sup -1} s{sup -1} at T = 295 K and F = 5 x 10{sup 4} V/cm. It was shown that the time dependence of the photocurrent during carrier drift and the voltage dependence of the drift mobility allowed the use of the concept of anomalous dispersive transport. Experimental data were explained using the model of transport controlled by carrier trapping by localized states with energy distribution near conduction and valence band edges described by the exponential law with a characteristic energy of {approx}0.05 eV.
- OSTI ID:
- 21562365
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 1 Vol. 44; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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