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Charge Transport Properties of CdMnTe Radiation Detectors

Technical Report ·
DOI:https://doi.org/10.2172/1044754· OSTI ID:1044754
 [1];  [1];  [1];  [1];  [2];  [1];  [3];  [1];  [3];  [2];  [2]
  1. Australian Nuclear Science and Technology Organisation (ANSTO), Lucas Heights, NSW (Australia)
  2. Brookhaven National Laboratory (BNL), Upton, NY (United States)
  3. Charles Univ., Prague (Czech Republic). Faculty of Mathematics and Physics

Growth, fabrication and characterization of indium-doped cadmium manganese telluride (CdMnTe) radiation detectors have been described. Alpha-particle spectroscopy measurements and time resolved current transient measurements have yielded an average charge collection efficiency approaching 100 %. Spatially resolved charge collection efficiency maps have been produced for a range of detector bias voltages. Inhomogeneities in the charge transport of the CdMnTe crystals have been associated with chains of tellurium inclusions within the detector bulk. Further, it has been shown that the role of tellurium inclusions in degrading charge collection is reduced with increasing values of bias voltage. The electron transit time was determined from time of flight measurements. From the dependence of drift velocity on applied electric field the electron mobility was found to be μn = (718 ± 55) cm2/Vs at room temperature.

Research Organization:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Organization:
USDOE Office of Science (SC)
DOE Contract Number:
AC02-98CH10886
OSTI ID:
1044754
Report Number(s):
BNL--98031-2012; NN2001000
Country of Publication:
United States
Language:
English