Cathodoluminescence characteristics of pseudomorphic modulation-doped quantum well AlGaAs/InGaAs/AlGaAs heterostructures at high carrier densities and their radiation damaging
Cathodoluminescence characteristics of modulation-doped transistor heterostructures AlGaAs/InGaAs/AlGaAs with the width of quantum well {approx}12 nm are investigated in this work. The investigation was conducted by means of cathodoluminescence generation depth changing; the depth depends on electron energy. This fact allows us to obtain cathodoluminescence characteristics from different depth of the investigated structure. The influence of {gamma}-radiation with several doses on the cathodoluminescence spectra was examined.
- OSTI ID:
- 21088077
- Journal Information:
- Semiconductors, Vol. 41, Issue 4; Other Information: DOI: 10.1134/S1063782607040227; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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