Cathodoluminescence from dilute GaN{sub x}As{sub 1-x} solutions (x {<=} 0.03)
- Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
Cathodoluminescence from GaN{sub x}As{sub 1-x} layers (0 {<=} x {<=} 0.03) was measured at photon energies ranging from the intrinsic absorption edge to 3 eV at room temperature. An additional emission band was visible in the visible range of the cathodoluminescence spectra. The intensity of this band is two orders of magnitude lower than the edge-emission intensity. The photon energy corresponding to the peak of this band and its FWHM are virtually independent of x and equal to {approx}2.1 and 0.6-0.7 eV, respectively. This emission is related to indirect optical transitions of electrons from the L{sub 6c} and {delta} conduction-band minimums to the {gamma}{sub 15} valence-band maximum.
- OSTI ID:
- 21087971
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 11 Vol. 41; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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