Two-electron germanium centers with a negative correlation energy in lead chalcogenides
- Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
It is shown that the charge state of the {sup 73}Ge antisite defect that arises in anionic sublattices of PbS, PbSe, and PbTe after radioactive transformation of {sup 73}As does not depend on the position of the Fermi level, whereas the {sup 73}Ge center in cationic sublattices of PbS and PbSe represents a two-electron donor with the negative correlation energy: the Moessbauer spectrum for the n-type samples corresponds to the neutral state of the donor center (Ge{sup 2+}), while this spectrum corresponds to the doubly ionized state (Ge{sup 4+}) of the center in the p-type samples. In partially compensated PbSe samples, a fast electron exchange between the neutral and ionized donor centers is realized. It is shown by the method of Moessbauer spectroscopy for the {sup 119}Sn isotope that the germanium-related energy levels are located higher than the levels formed in the band gap of these semiconductors by the impurity tin atoms.
- OSTI ID:
- 21087953
- Journal Information:
- Semiconductors, Vol. 41, Issue 12; Other Information: DOI: 10.1134/S1063782607120068; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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