Two-electron germanium centers with a negative correlation energy in lead chalcogenides

Journal Article · Sat Dec 15 04:00:00 EST 2007 · Semiconductors

DOI:https://doi.org/10.1134/S1063782607120068· OSTI ID:21087953

Terukov, E I ^[1]; Marchenko, A V; Zaitseva, A V

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1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)

It is shown that the charge state of the {sup 73}Ge antisite defect that arises in anionic sublattices of PbS, PbSe, and PbTe after radioactive transformation of {sup 73}As does not depend on the position of the Fermi level, whereas the {sup 73}Ge center in cationic sublattices of PbS and PbSe represents a two-electron donor with the negative correlation energy: the Moessbauer spectrum for the n-type samples corresponds to the neutral state of the donor center (Ge{sup 2+}), while this spectrum corresponds to the doubly ionized state (Ge{sup 4+}) of the center in the p-type samples. In partially compensated PbSe samples, a fast electron exchange between the neutral and ionized donor centers is realized. It is shown by the method of Moessbauer spectroscopy for the {sup 119}Sn isotope that the germanium-related energy levels are located higher than the levels formed in the band gap of these semiconductors by the impurity tin atoms.

• OSTI ID: 21087953
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 12 Vol. 41; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ARSENIC 73
BINDING ENERGY
CHARGE STATES
ELECTRON CORRELATION
ELECTRON EXCHANGE
ELECTRONS
FERMI LEVEL
GERMANIUM
GERMANIUM 73
GERMANIUM IONS
LEAD SELENIDES
LEAD SULFIDES
LEAD TELLURIDES
MOESSBAUER EFFECT
SEMICONDUCTOR MATERIALS
SPECTRA
TIN 119