Effect of precursor on epitaxially grown of ZnO thin film on p-GaN/sapphire (0 0 0 1) substrate by hydrothermal technique
- School of Advanced Materials Engineering and Research Center of Industrial Technology and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756 (Korea, Republic of)
- Applied Optics R and BD Division, Korea Photonics Technology Institute, Gwangju 500-460 (Korea, Republic of)
Single crystalline ZnO thin film on p-GaN/sapphire (0 0 0 1) substrate, using two different precursors by hydrothermal route at a temperature of 90 deg. C were successfully grown. The effect of starting precursor on crystalline nature, surface morphology and optical emission of the films were studied. ZnO thin films were grown in aqueous solution of zinc acetate and zinc nitrate. X-ray diffraction analysis revealed that all the thin films were single crystalline in nature and exhibited wurtzite symmetry and c-axis orientation. The thin films obtained with zinc nitrate had a more pitted rough surface morphology compared to the film grown in zinc acetate. However the thickness of the films remained unaffected by the nature of the starting precursor. Sharp luminescence peaks were observed from the thin films almost at identical energies but deep level emission was slightly prominent for the thin film grown in zinc nitrate.
- OSTI ID:
- 21068209
- Journal Information:
- Materials Research Bulletin, Vol. 43, Issue 3; Other Information: DOI: 10.1016/j.materresbull.2007.11.015; PII: S0025-5408(07)00523-5; Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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