Al-doped and pure ZnO thin films elaborated by sol–gel spin coating process for optoelectronic applications
- University of Orleans, ICMN, IUT Chartres (France)
- Mohamed Khider University, Department of Science of Matter (Algeria)
Pure and aluminum-doped zinc oxide thin films were grown by spin coating at room temperature. As a starting material, zinc acetate was used. The dopant source was aluminum nitrate; the dopant molar ratio was varied between 1 and 10%. Structural analysis reveals that all films consist of single hexagonal wurtzite phase ZnO, and a preferential orientation along c-axis. They have a homogeneous surface. The measurements show that the films are nanostructured. The transmittance is greater than 75% in the visible region. The band gap energy decreases with the addition of dopant (Al) in prepared thin films and the resistivity decreases significantly.
- OSTI ID:
- 22756233
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 12 Vol. 51; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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