Characteristics of Al-doped c-axis orientation ZnO thin films prepared by the sol-gel method

Journal Article · Thu Feb 02 04:00:00 EST 2006 · Materials Research Bulletin

DOI:https://doi.org/10.1016/j.materresbull.2005.08.014· OSTI ID:20891626

Xu, Z Q ^[1]; Deng, H ^[1]; Li, Y ^[1]; Guo, Q H ^[1]; Li, Y R ^[1]

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1. School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China)

Transparent conducting ZnO thin films doped with Al have been prepared by sol-gel method, which were characterized by X-ray diffraction, atomic force microscopy and ultra-violet spectrometer. The films showed a hexagonal wurtzite structure and high preferential c-axis orientation. The optical transmittance spectra of the films showed the transmittance higher than 85% within the visible wavelength region. A minimum resistivity of 6.2 x 10{sup -4} {omega} cm was obtained for the film doped with 1.5 mol.% Al, preheated at 300 deg. C for 15 min and post-heated at 530 deg. C for 1 h.

• OSTI ID: 20891626
• Journal Information: Materials Research Bulletin, Journal Name: Materials Research Bulletin Journal Issue: 2 Vol. 41; ISSN MRBUAC; ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMIC FORCE MICROSCOPY
DOPED MATERIALS
ELECTRICAL PROPERTIES
OPTICAL PROPERTIES
SOL-GEL PROCESS
SPECTROMETERS
THIN FILMS
X-RAY DIFFRACTION
ZINC OXIDES