Sol-gel derived Al-Ga co-doped transparent conducting oxide ZnO thin films
- Department of studies in Physics, Mangalore University, Mangalagangothri 574199 (India)
Transparent conducting ZnO doped with Al, Ga and co-doped Al and Ga (1:1) (AGZO) thin films were grown on glass substrates by cost effective sol-gel spin coating method. The XRD results showed that all the films are polycrystalline in nature and highly textured along the (002) plane. Enhanced grain size was observed in the case of AGZO thin films. The transmittance of all the films was more than 83% in the visible region of light. The electrical properties such as carrier concentration and mobility values are increased in case of AGZO compared to that of Al and Ga doped ZnO thin films. The minimum resistivity of 2.54 × 10{sup −3} Ω cm was observed in AGZO thin film. The co-doped AGZO thin films exhibited minimum resistivity and high optical transmittance, indicate that co-doped ZnO thin films could be used in transparent electronics mainly in display applications.
- OSTI ID:
- 22608697
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1731; ISSN APCPCS; ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM ADDITIONS
CARRIERS
CONCENTRATION RATIO
DOPED MATERIALS
ELECTRICAL PROPERTIES
GALLIUM ADDITIONS
GLASS
GRAIN SIZE
MOBILITY
OPACITY
POLYCRYSTALS
SOL-GEL PROCESS
SPIN
SPIN-ON COATING
SUBSTRATES
TEXTURE
THIN FILMS
VISIBLE RADIATION
X-RAY DIFFRACTION
ZINC OXIDES