Comprehensive model of damage accumulation in silicon

Journal Article · Tue Jan 01 04:00:00 EST 2008 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2829815· OSTI ID:21064506

Mok, K R. C.; Benistant, F ^[1]; Jaraiz, M; Rubio, J E; Castrillo, P; Pinacho, R ^[2]; Srinivasan, M P ^[3]

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1. Chartered Semiconductor Manufacturing, 60 Woodlands, Industrial Park D, Street 2, Singapore 738406 (Singapore)
2. Departamento de E. y Electronica, Universidad de Valladolid, ETSIT Campus Miguel Delibes, 47011 Valladolid (Spain)
3. Department of Chemical and Biomolecular Engineering, National University of Singapore, 4 Engineering Drive 4, Singapore 117576 (Singapore)

Ion implantation induced damage accumulation is crucial to the simulation of silicon processing. We present a physically based damage accumulation model, implemented in a nonlattice atomistic kinetic Monte Carlo simulator, that can simulate a diverse range of interesting experimental observations. The model is able to reproduce the ion-mass dependent silicon amorphous-crystalline transition temperature of a range of ions from C to Xe, the amorphous layer thickness for a range of amorphizing implants, the superlinear increase in damage accumulation with dose, and the two-layered damage distribution observed along the path of a high-energy ion. In addition, this model is able to distinguish between dynamic annealing and post-cryogenic implantation annealing, whereby dynamic annealing is more effective in removing damage than post-cryogenic implantation annealing at the same temperature.

• OSTI ID: 21064506
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 1 Vol. 103; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
COMPUTERIZED SIMULATION
DAMAGE
ION IMPLANTATION
MONTE CARLO METHOD
SEMICONDUCTOR MATERIALS
SILICON
TRANSITION TEMPERATURE