Effect of using a high-purity Fe source on the transport properties of p-type {beta}-FeSi{sub 2} grown by molecular-beam epitaxy
Journal Article
·
· Journal of Applied Physics
- Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573 (Japan)
Intentionally undoped p-type {beta}-FeSi{sub 2} thin films were grown on Si(111) substrates by molecular-beam epitaxy using low-purity (4N) and high-purity (5N) Fe sources to investigate the effect of using a high-purity Fe source on the electrical properties of {beta}-FeSi{sub 2}. The hole mobility increased and the hole density decreased greatly as the annealing temperature and time were increased, particularly for the {beta}-FeSi{sub 2} films produced using 5N-Fe. The observed temperature dependence of the hole mobility was reproduced well by considering various carrier scattering mechanisms due to acoustic-phonon, polar-optical phonon, nonpolar-optical phonon, and ionized impurities.
- OSTI ID:
- 21064447
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 102; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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