Effect of residual impurities on transport properties of {beta}-FeSi{sub 2} epitaxial films grown by molecular beam epitaxy

Journal Article · Sun Jul 01 04:00:00 EDT 2012 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4731246· OSTI ID:22089298

Terai, Y.; Yoneda, K.; Noda, K.; Miura, N.; Fujiwara, Y. ^[1]

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1. Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan)

Unintentionally doped {beta}-FeSi{sub 2} epitaxial films were grown on silicon-on-insulator substrates by molecular beam epitaxy using a high-purity (5N) Fe source to investigate the effect of residual impurities on the transport properties of {beta}-FeSi{sub 2}. From secondary ion mass spectroscopy analysis, impurities of As, Al, and Mn ({approx}10{sup 17} cm{sup -3}); P and B ({approx}10{sup 16} cm{sup -3}); and Cr and Pb ({approx}10{sup 15} cm{sup -3}) were detected in the epitaxial layer. In Hall measurements at room temperature, the films exhibited n-type conduction with a carrier density of 4-6 Multiplication-Sign 10{sup 16} cm{sup -3} and a Hall mobility of 400-440 cm{sup 2}/Vs. In the temperature (T) dependence of the transport properties, a transition from band conduction to hopping conduction was observed at approximately T = 230 K. At temperatures of 110-150 K, both negative and positive magnetoresistance (MR) were observed depending on the temperature and magnetic field. The MR exhibits mixed conduction of defect band conduction and band conduction in this temperature range.

• OSTI ID: 22089298
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 1 Vol. 112; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM
ARSENIC
BORON
CARRIER MOBILITY
CHROMIUM
CRYSTAL DEFECTS
IMPURITIES
ION MICROPROBE ANALYSIS
IRON SILICIDES
LEAD
MAGNETORESISTANCE
MANGANESE
MASS SPECTROSCOPY
MOLECULAR BEAM EPITAXY
PHOSPHORUS
SEMICONDUCTOR MATERIALS
SILICON
SUBSTRATES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0065-0273 K