Effect of rapid thermal annealing on the noise properties of InAs/GaAs quantum dot structures

Journal Article · Sat Sep 01 04:00:00 EDT 2007 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2775536· OSTI ID:21057538

Arpatzanis, N; Tsormpatzoglou, A; Dimitriadis, C A; Song, J D; Choi, W J; Lee, J I; Charitidis, C ^[1]

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1. Department of Physics, Aristotle University of Thessaloniki, 54124 Thessaloniki (Greece)

Self-assembled InAs quantum dots (QDs) were grown by molecular beam epitaxy (MBE) on n{sup +}-GaAs substrates, capped between 0.4 {mu}m thick n-type GaAs layers with electron concentration of 1x10{sup 16} cm{sup -3}. The effect of rapid thermal annealing at 700 deg. C for 60 s on the noise properties of the structure has been investigated using Au/n-GaAs Schottky diodes as test devices. In the reference sample without containing QDs, the noise spectra show a generation-recombination (g-r) noise behavior due to a discrete energy level located about 0.51 eV below the conduction band edge. This trap is ascribed to the M4 (or EL3) trap in GaAs MBE layers, related to a chemical impurity-native defect complex. In the structure with embedded QDs, the observed g-r noise spectra are due to a midgap trap level ascribed to the EL2 trap in GaAs, which is related to the InAs QDs dissolution due to the thermal treatment.

• OSTI ID: 21057538
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 5 Vol. 102; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CRYSTAL GROWTH
GALLIUM ARSENIDES
IMPURITIES
INDIUM ARSENIDES
MOLECULAR BEAM EPITAXY
QUANTUM DOTS
RECOMBINATION
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR MATERIALS
SUBSTRATES