Investigation of single electron traps induced by InAs quantum dots embedded in GaAs layer using the low-frequency noise technique
- Department of Physics, University of Thessaloniki, 54124 Thessaloniki (Greece)
The properties of the traps induced by InAs quantum dots (QDs), embedded in a GaAs layer grown by molecular beam epitaxy, are investigated by the low-frequency noise measurements using the Au/n-GaAs Schottky diode as a test device. The forward current noise spectra are composed of two noise components: a 1/f-like noise at low frequencies and a generation-recombination (g-r) noise at higher frequencies. The 1/f noise is ascribed to the mobility fluctuations within the space-charge region. The obtained Hooge parameter ({alpha}{sub H}=6x10{sup -5}) is larger than the expected value considering the phonon or impurity scattering mechanism, indicating the presence of the defects associated with QDs. The analysis of the g-r noise gives a single trap of density of about 1.6x10{sup 14} cm{sup -3} in the part of the GaAs layer located above the QDs.
- OSTI ID:
- 20658041
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 96; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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