Defect characterization of proton irradiated GaAs pn-junction diodes with layers of InAs quantum dots

Journal Article · Sat May 14 00:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4949476· OSTI ID:22596977

Sato, Shin-ichiro ^[1]; Schmieder, Kenneth J.; Warner, Jeffrey H.; Walters, Robert J. ^[2]; Hubbard, Seth M.; Forbes, David V. ^[3]; Ohshima, Takeshi ^[1]

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1. Takasaki Advanced Radiation Research Institute, National Institutes for Quantum and Radiological Science and Technology, Takasaki 370-1292 (Japan)
2. Optoelectronics and Radiation Effects Branch, U.S. Naval Research Laboratory, Washington, DC 20375 (United States)
3. NanoPower Research Labs, Rochester Institute of Technology, Rochester, New York 14623 (United States)

In order to expand the technology of III-V semiconductor devices with quantum structures to both terrestrial and space use, radiation induced defects as well as native defects generated in the quantum structures should be clarified. Electrically active defects in GaAs p{sup +}n diodes with embedded ten layers of InAs quantum dots (QDs) are investigated using Deep Level Transient Fourier Spectroscopy. Both majority carrier (electron) and minority carrier (hole) traps are characterized. In the devices of this study, GaP layers are embedded in between the QD layers to offset the compressive stress introduced during growth of InAs QDs. Devices are irradiated with high energy protons for three different fluences at room temperature in order to characterize radiation induced defects. Seven majority electron traps and one minority hole trap are found after proton irradiation. It is shown that four electron traps induced by proton irradiation increase in proportion to the fluence, whereas the EL2 trap, which appears before irradiation, is not affected by irradiation. These defects correspond to electron traps previously identified in GaAs. In addition, a 0.53 eV electron trap and a 0.14 eV hole trap are found in the QD layers before proton irradiation. It is shown that these native traps are also unaffected by irradiation. The nature of the 0.14 eV hole trap is thought to be Ga-vacancies in the GaP strain balancing layers.

• OSTI ID: 22596977
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 18 Vol. 119; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BALANCES
CARRIERS
DEFECTS
ELECTRONS
FOURIER TRANSFORM SPECTROMETERS
GALLIUM ARSENIDES
GALLIUM PHOSPHIDES
HOLES
INDIUM ARSENIDES
IRRADIATION
JUNCTION DIODES
LAYERS
P-N JUNCTIONS
PROTONS
QUANTUM DOTS
TEMPERATURE RANGE 0273-0400 K
TRAPS
VACANCIES