InAs self-assembled quantum dots superlattice structure fabricated by strain compensation technique
Journal Article
·
· AIP Conference Proceedings
- Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573 (Japan)
We have investigated a growth technique to fabricate multiple-stacked InAs self-assembled quantum dots (QDs) on GaAs (001) substrates. The stacking process was achieved by strain compensation technique, in which GaNAs was used as a spacer layer to bury a QD layer. No dislocations were observed even after 20 layers of stacking, and the area density of QDs amounted to the order of 1012 cm-2. From PL measurement, we clearly observed a single emission peak from QDs around 1200 nm at RT. Further, the emission peak energy simply shifted to a longer wavelength with increasing N composition in GaNAs spacer layer due to the lowering the quantum confinement energy.
- OSTI ID:
- 21055066
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 893; ISSN APCPCS; ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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