Ultralow equivalent oxide thickness obtained for thin amorphous LaAlO{sub 3} layers grown on Si(001)

Journal Article · Sun Nov 04 23:00:00 EST 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2811956· OSTI ID:21016142

Becerra, L; Merckling, C; Baboux, N; Plossu, C; Marty, O; El-Kazzi, M; Saint-Girons, G; Vilquin, B; Hollinger, G ^[1]

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1. Universite de Lyon, Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, Ecole Centrale de Lyon, Ecully F-69134 (France)

Electron beam evaporation in a molecular beam epitaxy reactor was used to deposit, at 400 deg. C, amorphous LaAlO{sub 3} high-{kappa} oxide films on p-type Si(001). X-ray photoelectron spectroscopy and transmission electron microscopy showed that the interface with Si is free of SiO{sub 2} or silicates. Electrical measurements performed on as-deposited samples reveal an equivalent oxide thickness as low as 5 A for a film having a physical thickness of 41 A, a leakage current of 5.6x10{sup -2} A/cm{sup 2} at |V{sub g}-V{sub FB}|=1 V, and no flatband voltage shift.

• OSTI ID: 21016142
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 19 Vol. 91; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINATES
CRYSTAL GROWTH
DIELECTRIC MATERIALS
ELECTRIC POTENTIAL
ELECTRON BEAMS
EVAPORATION
LANTHANUM COMPOUNDS
LAYERS
LEAKAGE CURRENT
MOLECULAR BEAM EPITAXY
SILICATES
SILICON OXIDES
THICKNESS
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
VACUUM COATING
X-RAY PHOTOELECTRON SPECTROSCOPY