Initial stages of chain formation in a single layer of (In,Ga)As quantum dots grown on GaAs (100)

Journal Article · Mon Aug 27 04:00:00 EDT 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2775801· OSTI ID:21016120

Schmidbauer, M; Wang, Zh M; Mazur, Yu I; Lytvyn, P M; Salamo, G J; Grigoriev, D; Schaefer, P; Koehler, R; Hanke, M ^[1]

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1. Institut fuer Kristallzuechtung, Max-Born-Strasse 2, D-12489 Berlin (Germany)

The self-organized formation of In{sub 0.40}Ga{sub 0.60}As quantum dot chains was investigated using x-ray scattering. Two samples were compared grown on GaAs(100) by molecular beam epitaxy. The first sample with a single layer of In{sub 0.40}Ga{sub 0.60}As dots shows weak quantum dot alignment and a corresponding elongated shape along [011], while the top layer of a multilayered In{sub 0.40}Ga{sub 0.60}As/GaAs sample exhibits extended and highly regular quantum dot chains oriented along [011]. Numerical calculations of the three-dimensional strain fields are used to explain the initial stages of chain formation by anisotropic strain relaxation induced by the elongated dot shape.

• OSTI ID: 21016120
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 9 Vol. 91; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANISOTROPY
CRYSTAL GROWTH
GALLIUM ARSENIDES
INDIUM ARSENIDES
LAYERS
MOLECULAR BEAM EPITAXY
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
X-RAY DIFFRACTION