Optical anisotropy of InGaAs/Ga(As,P) quantum dots grown on GaAs (311)B substrates
Very high quality structures consisting of multilayer InGaAs quantum dots (QDs) were grown on (311)B GaAs by introducing strain-compensated Ga(As,P) barriers between adjacent QD layers. The dot optical anisotropy was studied by performing polarized photoluminescence (PL) measurements both on the surface and the edges of the samples. The observed in-plane optical anisotropy of the dots can be eventually related to the direction and the extent of the dot strain relaxation. The transverse electric mode of the edge-emitted PL showed about 5° deviation from the sample surface for the dots grown on (311)B GaAs. This can be attributed to the tilted vertical alignment and the shape asymmetry of dots resulted from the substrate orientation.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE; National Renewable Energy Laboratory (NREL), Laboratory Directed Research and Development (LDRD) Program
- DOE Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1344758
- Report Number(s):
- NREL/JA--520-42844
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 22 Vol. 91; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
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