High anisotropy of lateral alignment in multilayered (In,Ga)As/GaAs(100) quantum dot structures

Journal Article · Wed Dec 01 04:00:00 EST 2004 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1815382· OSTI ID:20658123

Wang, Zh M; Churchill, H; George, C E; Salamo, G J ^[1]

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1. Physics Department, University of Arkansas, Fayetteville, Arkansas 72701 (United States)

A formation process for long chains of quantum dots during the molecular-beam epitaxial growth of (In,Ga)As/GaAs(100) multilayers is presented. The morphology evolution monitored by atomic force microscopy for a series of (In,Ga)As layers demonstrates that the highly anisotropic lateral alignment of dots is gradually developed as the result of the strain field interaction mediated by the GaAs spacer coupled with the anisotropic surface kinetics that occurs during capping the dots. The dot-chain structure, providing unique properties of its own, is demonstrated to serve as a template for the spatially controlled growth of strained quantum dots in general.

• OSTI ID: 20658123
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 11 Vol. 96; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANISOTROPY
ATOMIC FORCE MICROSCOPY
CRYSTAL GROWTH
GALLIUM ARSENIDES
INDIUM ARSENIDES
LAYERS
MOLECULAR BEAM EPITAXY
MORPHOLOGY
QUANTUM DOTS
SEMICONDUCTOR MATERIALS