Defect structure of Sb{sub 2-x}Fe{sub x}Te{sub 3} single crystals
- Joint Laboratory of Solid State Chemistry, Institute of Macromolecular Chemistry of the Academy of Sciences of the Czech Republic, University of Pardubice, Studentska 84, 532 10 Pardubice (Czech Republic)
- Faculty of Chemical Technology, University of Pardubice, Cs. Legii Square 565, 532 10 Pardubice (Czech Republic)
- Department of Physics, University of Michigan, Ann Arbor, MI 48109-1120 (United States)
Single crystals of Sb{sub 2-x}Fe{sub x}Te{sub 3} (c{sub Fe}=0-9.5x10{sup 19}cm{sup -3}) were prepared by Bridgman method. The interpretation of the reflection spectra in plasma resonance region indicates that Fe increases the concentration of holes (acceptor) and each Fe atom incorporated in Sb{sub 2}Te{sub 3} structure liberates 0.4-0.5 hole. Observed effect is elucidated by means of point defect model. According to the model Fe atoms enter the structure and form uncharged substitutional defects Fe{sub Sb}{sup x}. Since this defect cannot affect the free-carrier concentration directly, we assume an interaction of the entering Fe-atoms with natives defects leading to a rise in the concentration of antisite defects Sb{sub Te}{sup '}, to a decrease of V{sub Te} concentration, and to an increase in the concentration of holes.
- OSTI ID:
- 21015729
- Journal Information:
- Journal of Solid State Chemistry, Vol. 180, Issue 3; Other Information: DOI: 10.1016/j.jssc.2006.12.016; PII: S0022-4596(06)00654-2; Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); ISSN 0022-4596
- Country of Publication:
- United States
- Language:
- English
Similar Records
Point defects in Pb-doped Sb{sub 2}Te{sub 3} single crystals
125Te NMR and Seebeck Effect in Bi2Te3 Synthesized from Stoichiometric and Te-Rich Melts