Point defects in Pb-doped Sb{sub 2}Te{sub 3} single crystals

Journal Article · Tue Jun 01 04:00:00 EDT 1999 · Journal of Solid State Chemistry

DOI:https://doi.org/10.1006/jssc.1999.8242· OSTI ID:679230

Plechacek, T; Horak, J ^[1]

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1. Academy of Sciences of the Czech Republic and Univ. of Pardubice (Czech Republic). Joint Lab. of Solid State Chemistry

Single crystals of Sb{sub 2}Te{sub 3} doped with Pb atoms (c{sub Pb} = 0--2.1{times}10{sup 20} atoms/cm{sup 3}) were characterized by the measurements of the reflectivity in the plasma resonance frequency region, the Hall coefficient, the electrical conductivity, and the Seebeck coefficient. Measurements of the Hall coefficient for a series of Pb-doped Sb{sub 2}Te{sub 3} crystals served to determine the concentration of holes as a function of the Pb content in the lattice. The obtained variation of the hole concentration is ascribed to the formation of substitutional defects Pb{prime}{sub Sb} and to the interaction of the Pb atoms entering into the lattice with anti-site defects and vacancies in the tellurium sublattice. Improved ideas on point defects in the Pb-doped Sb{sub 2}Te{sub 3} single crystals are formulated in this paper. 18 refs., 6 figs., 3 tabs.

• OSTI ID: 679230
• Journal Information: Journal of Solid State Chemistry, Journal Name: Journal of Solid State Chemistry Journal Issue: 1 Vol. 145; ISSN 0022-4596; ISSN JSSCBI
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANTIMONY TELLURIDES
CRYSTAL DEFECTS
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
EXPERIMENTAL DATA
HOLES
LEAD ADDITIONS
MONOCRYSTALS
TEMPERATURE DEPENDENCE