Transport coefficients of titanium-doped Sb{sub 2}Te{sub 3} single crystals

Journal Article · Fri Apr 15 00:00:00 EDT 2005 · Journal of Solid State Chemistry

DOI:https://doi.org/10.1016/j.jssc.2005.02.005· OSTI ID:20725902

Drasar, C ^[1]; Steinhart, M ^[1]; Lostak, P ^[1]; Shin, H -K ^[2]; Dyck, J S ^[3]; Uher, C ^[3]

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1. Faculty of Chemical Technology, University of Pardubice, Cs. Legii Square 565, 532 10 Pardubice (Czech Republic)
2. Department of Physics, DMST, Ajou University (Korea, Republic of)
3. Department of Physics, University of Michigan, Ann Arbor, MI 48109-1120 (United States)

Titanium-doped single crystals (c{sub Ti}=0-2x10{sup 20}atomscm{sup -3}) were prepared from the elements Sb, Ti, and Te of 5N purity by a modified Bridgman method. The obtained crystals were characterized by measurements of the temperature dependence of the electrical resistivity, Hall coefficient, Seebeck coefficient and thermal conductivity in the temperature range of 3-300K. It was observed that with an increasing Ti content in the samples the electrical resistivity, the Hall coefficient and the Seebeck coefficient increase. This means that the incorporation of Ti atoms into the Sb{sub 2}Te{sub 3} crystal structure results in a decrease in the concentration of holes in the doped crystals. For the explanation of the observed effect a model of defects in the crystals is proposed. The data of the lattice thermal conductivity were fitted well assuming that phonons scatter on boundaries, point defects, charge carriers, and other phonons.

• OSTI ID: 20725902
• Journal Information: Journal of Solid State Chemistry, Vol. 178, Issue 4; Other Information: DOI: 10.1016/j.jssc.2005.02.005; PII: S0022-4596(05)00057-5; Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); ISSN 0022-4596
• Country of Publication: United States
• Language: English

Related Subjects

37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
ANTIMONY TELLURIDES
BRIDGMAN METHOD
CHARGE CARRIERS
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
HOLES
IMPURITIES
MONOCRYSTALS
POINT DEFECTS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0000-0013 K
TEMPERATURE RANGE 0013-0065 K
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
THERMAL CONDUCTIVITY
TITANIUM