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Title: 125Te NMR and Seebeck Effect in Bi2Te3 Synthesized from Stoichiometric and Te-Rich Melts

Journal Article · · Journal of Physical Chemistry. C
 [1];  [1];  [1];  [2];  [1];  [1];  [1]
  1. Ames Lab., Ames, IA (United States). Division of Materials Sciences and Engineering
  2. Iowa State Univ., Ames, IA (United States). Dept. of Physics and Astronomy

Bi2Te3 is a well-known thermoelectric material and, as a new form of quantum matter, a topological insulator. Variation of local chemical composition in Bi2Te3 results in formation of several types of atomic defects, including Bi and Te vacancies and Bi and Te antisite defects; these defects can strongly affect material functionality via generation of free electrons and/or holes. Nonuniform distribution of atomic defects produces electronic inhomogeneity, which can be detected by 125Te nuclear magnetic resonance (NMR). Here we report on 125Te NMR and Seebeck effect (heat to electrical energy conversion) for two single crystalline samples: (#1) grown from stoichiometric composition by Bridgman technique and (#2) grown out of Te-rich, high temperature flux. The Seebeck coefficients of these samples show p- and n-type conductivity, respectively, arising from different atomic defects. 125Te NMR spectra and spin–lattice relaxation measurements demonstrate that both Bi2Te3 samples are electronically inhomogeneous at the atomic scale, which can be attributed to a different Te environment due to spatial variation of the Bi/Te ratio and formation of atomic defects. In conclusion, correlations between 125Te NMR spectra, spin–lattice relaxation times, the Seebeck coefficients, carrier concentrations, and atomic defects are discussed. Our data demonstrate that 125Te NMR is an effective probe to study antisite defects in Bi2Te3.

Research Organization:
Ames Laboratory (AMES), Ames, IA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
AC02-07CH11358
OSTI ID:
1342943
Report Number(s):
IS-J-9117
Journal Information:
Journal of Physical Chemistry. C, Vol. 120, Issue 44; ISSN 1932-7447
Publisher:
American Chemical SocietyCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 8 works
Citation information provided by
Web of Science

References (25)

Colloquium: Topological insulators journal November 2010
Controlling Bulk Conductivity in Topological Insulators: Key Role of Anti-Site Defects journal March 2012
Electronic inhomogeneity and Ag:Sb imbalance of Ag 1 y Pb 18 Sb 1 + z Te 20 high-performance thermoelectrics elucidated by T 125 e and P 207 b NMR journal September 2009
Electronic and thermal transport in GeTe: A versatile base for thermoelectric materials journal August 2013
Thermoelectric properties of Ag 2 Sb 2 Ge 46 −  x Dy x Te 50 alloys with high power factor: Thermoelectric properties of Ag 2 Sb 2 Ge 46 −  x Dy x Te 50 alloys journal September 2013
Effects of Ge substitution in GeTe by Ag or Sb on the Seebeck coefficient and carrier concentration derived from Te 125 NMR journal January 2016
Spin–Lattice Relaxation in Bismuth Chalcogenides journal August 2012
NMR Probe of Metallic States in Nanoscale Topological Insulators journal January 2013
Thermal properties of high quality single crystals of bismuth telluride—Part I: Experimental characterization journal January 1988
Use of frit-disc crucibles for routine and exploratory solution growth of single crystalline samples journal December 2015
Growth of single crystals from metallic fluxes journal June 1992
The crystal structure of Bi2Te3−xSex journal March 1963
Electronic structure and transport anisotropy of Bi 2 Te 3 and Sb 2 Te 3 journal October 2011
Electronic inhomogeneity in n - and p -type PbTe detected by 125 Te NMR journal September 2013
Evidence for the existence of antistructure defects in bismuth telluride by density measurements journal January 1965
Understanding Bulk Defects in Topological Insulators from Nuclear-Spin Interactions journal December 2013
Antisite defects in n -type Bi 2 (Te,Se) 3 : Experimental and theoretical studies journal April 2014
First-principles density functional theory study of native point defects in Bi 2 Te 3 journal October 2011
Complex thermoelectric materials journal February 2008
NMR investigation of the diffusion and conduction properties of the semiconductor tellurium. I. Electronic properties journal May 1979
Solid-State NMR of Inorganic Semiconductors book January 2011
Distributions of Conduction Electrons as Manifested in MAS NMR of Gallium Nitride journal April 2006
Stretched exponential relaxation arising from a continuous sum of exponential decays journal November 2006
Macroscopic thermoelectric inhomogeneities in (AgSbTe2)x(PbTe)1−x journal October 2005
Electrical and Thermal Properties of Bi 2 Te 3 journal December 1957

Cited By (1)