Photoluminescence spectroscopy of nearly defect-free InN microcrystals exhibiting nondegenerate semiconductor behaviors

Journal Article · Mon Oct 29 00:00:00 EDT 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2804568· OSTI ID:21013761

Hsiao, C -L; Hsu, H -C; Chen, L -C; Wu, C -T; Chen, C -W; Min, Chen; Tu, L -W; Chen, K -H ^[1]

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1. Center for Condensed Matter Sciences, National Taiwan University, Taipei 106, Taiwan (China)

Nearly defect-free InN microcrystals grown on Si(111) substrates have been realized by plasma-assisted molecular beam epitaxy. High-resolution transmission electron microscope images reveal that these microcrystals exhibit single-crystalline wurtzite structure. Low temperature photoluminescence (PL) shows a strong emission peak at 0.679 eV with a very narrow linewidth of 17 meV at excitation power density of 3.4 W/cm{sup 2}. Temperature-dependent PL spectra follow the Varshni equation well, and peak energy blueshifts by {approx}45 meV from 300 to 15 K. Power-density-dependent PL spectroscopy manifests direct near-band-edge transition. A low carrier density of 3x10{sup 17} cm{sup -3} has been estimated from PL empirical relation, which is close to the critical carrier density of the Mott transition of 2x10{sup 17} cm{sup -3}.

• OSTI ID: 21013761
• Journal Information: Applied Physics Letters, Vol. 91, Issue 18; Other Information: DOI: 10.1063/1.2804568; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CARRIER DENSITY
CRYSTAL GROWTH
EXCITATION
INDIUM NITRIDES
MEV RANGE 10-100
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
PHOTOLUMINESCENCE
POWER DENSITY
SEMICONDUCTOR MATERIALS
SILICON
SPECTRAL SHIFT
SPECTROSCOPY
SUBSTRATES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0013-0065 K
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
TRANSMISSION ELECTRON MICROSCOPY