Room-temperature infrared photoluminescence from sputter-deposited InN films

Journal Article · Wed Sep 15 00:00:00 EDT 2010 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3485824· OSTI ID:21476464

Sasaoka, Takashi; Mori, Masaki; Miyazaki, Takayuki; Adachi, Sadao ^[1]

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1. Graduate School of Engineering, Gunma University, Kiryu-shi, Gunma 376-8515 (Japan)

Wurtzite InN films are deposited on Si(100) and glass substrates by reactive rf-magnetron sputtering at a substrate temperature of 300 deg. C. The InN films have high electron concentrations of n{approx}4x10{sup 20} cm{sup -3} at 300 K. The optical band-gap energy is determined to be {approx}1.4 eV at 300 K. This value is considerably smaller than the previously reported value of {approx}2 eV in sputter-deposited InN films. Strong infrared photoluminescence (PL) with a peak at {approx}1.3 eV is also observed at room temperature. Thermal annealing in dry N{sub 2} atmosphere at 600 deg. C changes the deposited film from wurtzite InN to a cubic In{sub 2}O{sub 3} that still exhibits PL emission but in the visible spectral region ({approx}2 eV).

• OSTI ID: 21476464
• Journal Information: Journal of Applied Physics, Vol. 108, Issue 6; Other Information: DOI: 10.1063/1.3485824; (c) 2010 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
CUBIC LATTICES
DEPOSITION
ELECTRONS
EMISSION SPECTRA
ENERGY GAP
EV RANGE
GLASS
INDIUM NITRIDES
INDIUM OXIDES
PHOTOLUMINESCENCE
SEMICONDUCTOR MATERIALS
SILICON
SPUTTERING
SUBSTRATES
THIN FILMS
VISIBLE SPECTRA
CHALCOGENIDES
CRYSTAL LATTICES
CRYSTAL STRUCTURE
ELEMENTARY PARTICLES
ELEMENTS
EMISSION
ENERGY RANGE
FERMIONS
FILMS
HEAT TREATMENTS
INDIUM COMPOUNDS
LEPTONS
LUMINESCENCE
MATERIALS
NITRIDES
NITROGEN COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PHOTON EMISSION
PNICTIDES
SEMIMETALS
SPECTRA