Dislocation reduction via selective-area growth of InN accompanied by lateral growth by rf-plasma-assisted molecular-beam epitaxy

Journal Article · Mon Oct 04 00:00:00 EDT 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3488824· OSTI ID:21466999

Kamimura, Jumpei ^[1]; Kishino, Katsumi; Kikuchi, Akihiko ^[1]

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1. Department of Engineering and Applied Sciences, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554 (Japan)

We investigated the selective-area growth (SAG) of InN by rf-plasma-assisted molecular-beam epitaxy using molybdenum (Mo)-mask-patterned sapphire (0001) substrates, which resulted in the formation of regularly arranged N-polar InN microcrystals. Transmission electron microscopy observation confirmed that the laterally grown side areas were nearly dislocation-free, although many threading dislocations (10{sup 9}-10{sup 10} cm{sup -2}) were generated at the InN/sapphire interface and propagated into the center of the InN microcrystals along the crystal c-axis. The laterally grown InN microcrystals exhibited narrow near-IR emission spectra with a peak photon energy of 0.627 eV and a linewidth of 39 meV at room temperature.

• OSTI ID: 21466999
• Journal Information: Applied Physics Letters, Vol. 97, Issue 14; Other Information: DOI: 10.1063/1.3488824; (c) 2010 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL GROWTH
CRYSTALS
DISLOCATIONS
EMISSION SPECTRA
INDIUM NITRIDES
INTERFACES
MOLECULAR BEAM EPITAXY
MOLECULAR STRUCTURE
MOLYBDENUM
PLASMA
SAPPHIRE
SEMICONDUCTOR MATERIALS
SUBSTRATES
TRANSMISSION ELECTRON MICROSCOPY
CORUNDUM
CRYSTAL DEFECTS
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
ELECTRON MICROSCOPY
ELEMENTS
EPITAXY
INDIUM COMPOUNDS
LINE DEFECTS
MATERIALS
METALS
MICROSCOPY
MINERALS
NITRIDES
NITROGEN COMPOUNDS
OXIDE MINERALS
PNICTIDES
REFRACTORY METALS
SPECTRA
TRANSITION ELEMENTS