Growth of amorphous TeO{sub x} (2{<=}x{<=}3) thin film by radio frequency sputtering

Journal Article · Sun Apr 15 04:00:00 EDT 2007 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2717139· OSTI ID:20982835

Dewan, Namrata; Gupta, Vinay; Sreenivas, K; Katiyar, R S ^[1]

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1. Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India)

Thin films of Tellurium oxide TeO{sub x} over a wide range of x (2 to 3) were prepared by radio frequency diode sputtering at room temperature on corning glass and quartz substrate. The deposited films are amorphous in nature and IR spectroscopy reveals the formation of Te-O bond. X-ray photoelectron spectroscopy shows the variation in the stoichiometry of TeO{sub x} film from x=2 to 3 with an increase in oxygen percentage (25 to 100%) in processing sputtering gas composition. Raman spectroscopy depicts the formation of TeO{sub 3} trigonal pyramid besides TeO{sub 4} disphenoid in the amorphous TeO{sub x} film with increase in the value of x. The varying stoichiometry of TeO{sub x} thin film (x=2 to 3) was found to influence the optical, electrical, and elastic properties. The optical band gap of film increases from 3.8 to 4.2 eV with increasing x and is attributed to the decrease in density. The elastic constants (C{sub 11} and C{sub 44}) of the deposited films are lower than the corresponding value reported for TeO{sub 2} single crystal.

• OSTI ID: 20982835
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 8 Vol. 101; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMORPHOUS STATE
CRYSTAL GROWTH
DEPOSITION
DIELECTRIC MATERIALS
ELASTICITY
INFRARED SPECTRA
MONOCRYSTALS
OXYGEN
PERMITTIVITY
QUARTZ
RADIOWAVE RADIATION
RAMAN SPECTRA
RAMAN SPECTROSCOPY
REFRACTIVE INDEX
SPUTTERING
STOICHIOMETRY
TELLURIUM OXIDES
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
X-RAY PHOTOELECTRON SPECTROSCOPY