Room temperature deposited indium zinc oxide thin film transistors
- Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
Depletion-mode indium zinc oxide (IZO) channel thin film transistors were fabricated on glass substrates from layers deposited at room temperature using rf magnetron sputtering. The threshold voltage was in the range from -5.5 to -6.5 V depending on gate dielectric (SiO{sub 2}) thickness and the drain current on-to-off ratio was {approx}10{sup 5}. The maximum field effect mobility in the channel was {approx}4.5 cm{sup 2} V{sup -1} s{sup -1}, lower than the Hall mobility of {approx}17 cm{sup 2} V{sup -1} s{sup -1} in the same layers, suggesting a strong influence of scattering due to trapped charges at the SiO{sub 2}-IZO interface. The low deposition and processing temperatures make these devices suitable for applications requiring flexible substrates.
- OSTI ID:
- 20971952
- Journal Information:
- Applied Physics Letters, Vol. 90, Issue 23; Other Information: DOI: 10.1063/1.2746084; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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