Transparent amorphous indium zinc oxide thin-film transistors fabricated at room temperature

Journal Article · Mon Jan 08 00:00:00 EST 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2430917· OSTI ID:20883268

Song, Ju-Il; Park, Jae-Soung; Kim, Howoon; Heo, Young-Woo; Lee, Joon-Hyung; Kim, Jeong-Joo; Kim, G M; Choi, Byeong Dae ^[1]

---

1. Department of Inorganic Materials Engineering, Kyungpook National University, Daegu 702-701 (Korea, Republic of)

The authors report on transparent thin-film transistors using amorphous indium zinc oxides for an active channel layer and gate-source-drain electrodes fabricated by rf magnetron sputtering at room temperature. The conducting properties of the amorphous indium zinc oxides were controlled by oxygen partial pressures in the sputtering ambient. An amorphous AlO{sub x} served as the gate dielectric oxide. Devices were realized that display a threshold voltage of 1.1 V and an on/off ratio of {approx}10{sup 6} operated as a n-type enhancement mode with saturation mobility of 0.53 cm{sup 2}/V s. The devices showed optical transmittance about 80% in the visible range.

• OSTI ID: 20883268
• Journal Information: Applied Physics Letters, Vol. 90, Issue 2; Other Information: DOI: 10.1063/1.2430917; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMORPHOUS STATE
CARRIER MOBILITY
DEPOSITION
DIELECTRIC MATERIALS
ELECTRIC POTENTIAL
ELECTRODES
INDIUM COMPOUNDS
LAYERS
OPACITY
OXYGEN
PARTIAL PRESSURE
SEMICONDUCTOR MATERIALS
SPUTTERING
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
TRANSISTORS
ZINC OXIDES