Fairly pure ultraviolet electroluminescence from ZnO-based light-emitting devices

Journal Article · Mon Sep 11 00:00:00 EDT 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2352722· OSTI ID:20883225

Peiliang, Chen; Xiangyang, Ma; Deren, Yang ^[1]

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1. State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027 (China)

Fairly pure ultraviolet (UV) electroluminescence (EL) was realized on a ZnO-based metal-insulator (SiO{sub x},x{<=}2)-semiconductor structure on a silicon substrate, which was easily fabricated by the reactive direct current sputtering and electron beam evaporation. The UV EL originated from the near-band-edge (NBE) emission of ZnO was achieved at room temperature when the device was under sufficient forward bias with the negative voltage applied on the silicon substrate. Moreover, the intermediate SiO{sub x} layer should be thick enough to confine the electrons in the conduction band of ZnO beneath the ZnO/SiO{sub x} interface, which is critical for generation of NBE emission from ZnO.

• OSTI ID: 20883225
• Journal Information: Applied Physics Letters, Vol. 89, Issue 11; Other Information: DOI: 10.1063/1.2352722; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DIRECT CURRENT
ELECTRIC POTENTIAL
ELECTROLUMINESCENCE
ELECTRON BEAMS
ELECTRONS
EVAPORATION
INTERFACES
LAYERS
LIGHT EMITTING DIODES
SEMICONDUCTOR MATERIALS
SILICON
SILICON OXIDES
SPUTTERING
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
ULTRAVIOLET RADIATION
VACUUM COATING
ZINC OXIDES