High bandwidth Ge p-i-n photodetector integrated on Si

Journal Article · Mon Aug 14 04:00:00 EDT 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2337003· OSTI ID:20883156

Oehme, M; Werner, J; Kasper, E; Jutzi, M; Berroth, M ^[1]

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1. Institut fuer Halbleitertechnik, Universitaet Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart (Germany)

The authors present a germanium on silicon p-i-n photodiode for vertical light incidence. For a Ge p-i-n photodetector with a radius of 5 {mu}m a 3 dB bandwidth of 25 GHz is measured at an incident wavelength of 1.55 {mu}m and zero external bias. For a modest reverse bias of 2 V, the 3 dB bandwidth increases to 39 GHz. The monolithically integrated devices are grown on Si with solid source molecular beam epitaxy. The complete detector structure consisting of a highly p-doped Ge buried layer, an intrinsic absorption region, and a highly n-doped top contact layer of Ge/Si is grown in one continuous epitaxial run. A low growth temperature sequence was needed to obtain abrupt doping transitions between the highly doped regions surrounding the intrinsic layer. A theoretical consideration of the 3 dB bandwidth of the Ge detector was used to optimize the layer structure. For a photodiode with 5 {mu}m mesa radius the maximum theoretical 3 dB frequency is 62 GHz with an intrinsic region thickness of 307 nm.

• OSTI ID: 20883156
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 7 Vol. 89; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION
CRYSTAL GROWTH
DOPED MATERIALS
GE SEMICONDUCTOR DETECTORS
GERMANIUM
GHZ RANGE 01-100
LAYERS
MOLECULAR BEAM EPITAXY
PHOTODETECTORS
PHOTODIODES
SEMICONDUCTOR MATERIALS
SILICON
THICKNESS
VISIBLE RADIATION