Band offsets and chemical bonding states in N-plasma-treated HfSiON gate stacks studied by photoelectron spectroscopy and x-ray absorption spectroscopy
- Department of Applied Chemistry, University of Tokyo, Bunkyo-ku, Tokyo 113-8656 (Japan)
We have investigated valence band and conduction band electronic structures and interfacial chemical bonding states of nitrogen-plasma-treated HfSiON/SiON gate stacks on Si substrates with and without rapid thermal annealing by photoelectron spectroscopy and x-ray absorption spectroscopy to correlate them with electrical properties. We have found that the N3 component in N 1s can be correlated with electron trapping. Photoelectron spectra and O K-edge absorption spectra confirm the existence of the SiO{sub 2}-rich phase-separated area in HfSiON films. Band offsets for the HfSiON/Si and the SiO{sub 2}-rich HfSiON/Si are determined to be 2.5 and 4.2 eV for valence band and 1.7 and 3.6 eV for conduction band, respectively.
- OSTI ID:
- 20879990
- Journal Information:
- Journal of Applied Physics, Vol. 100, Issue 3; Other Information: DOI: 10.1063/1.2219694; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Depth profiling of chemical states and charge density in HfSiON by photoemission spectroscopy using synchrotron radiation
Precise determination of band offsets and chemical states in SiN/Si studied by photoemission spectroscopy and x-ray absorption spectroscopy