Effect of Nitrogen on Band Alignment in HfSiON Gate Dielectrics
Nitridation of HfSiO films improves certain physical and electrical properties-when using gate stack layers-such as their crystallization temperature and their resistance to interdiffusion. We have studied the band alignment of HfSiO and HfSiON films by soft x-ray photoemission, oxygen K-edge x-ray absorption, and spectroscopic ellipsometry. Nitridation of HfSiO reduced the band gap by 1.50 eV{+-}0.05 eV, and the valence- and conduction-band offsets by 1.2 eV{+-}0.1 eV and 0.33 eV{+-}0.05 eV, respectively. Although the band-gap reduction should lead to increased leakage, the barrier heights are still sufficient for proposed near-future complementary metal-oxide-semiconductor applications.
- Research Organization:
- Brookhaven National Laboratory (BNL) National Synchrotron Light Source
- Sponsoring Organization:
- Doe - Office Of Science
- DOE Contract Number:
- AC02-98CH10886
- OSTI ID:
- 913674
- Report Number(s):
- BNL--78242-2007-JA
- Journal Information:
- Appl. Phys. Lett., Journal Name: Appl. Phys. Lett. Vol. 87; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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