Correlating ion energies and CF{sub 2} surface production during fluorocarbon plasma processing of silicon
- Department of Chemistry, Colorado State University, Fort Collins, Colorado 80523-1872 (United States)
Ion energy distribution (IED) measurements are reported for ions in the plasma molecular beam source of the imaging of radicals interacting with surfaces (IRIS) apparatus. The IEDs and relative intensities of nascent ions in C{sub 3}F{sub 8} and C{sub 4}F{sub 8} plasma molecular beams were measured using a Hiden PSM003 mass spectrometer mounted on the IRIS main chamber. The IEDs are complex and multimodal, with mean ion energies ranging from 29 to 92 eV. Integrated IEDs provided relative ion intensities as a function of applied rf power and source pressure. Generally, higher applied rf powers and lower source pressures resulted in increased ion intensities and mean ion energies. Most significantly, a comparison to CF{sub 2} surface interaction measurements previously made in our laboratories reveals that mean ion energies are directly and linearly correlated to CF{sub 2} surface production in these systems.
- OSTI ID:
- 20879950
- Journal Information:
- Journal of Applied Physics, Vol. 100, Issue 1; Other Information: DOI: 10.1063/1.2206973; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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