High quality epitaxial growth of PbTiO{sub 3} by molecular beam epitaxy using H{sub 2}O{sub 2} as the oxygen source
- Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)
Single crystalline PbTiO{sub 3} films have been epitaxially grown on SrTiO{sub 3} (001) substrates by molecular beam epitaxy using H{sub 2}O{sub 2} as the source of active oxygen. The optimum growth conditions have been determined by analyzing a range of growth parameters affecting growth and used to attain single phase and stoichiometric PbTiO{sub 3} thin films. In situ reflection high-energy electron diffraction pattern indicated the PbTiO{sub 3} films to be grown under a two-dimensional growth mode. The full width at half maximum of the rocking curve of a relatively thin 65 nm (001) PbTiO{sub 3} film is 6.2 arc min which is indicative of high crystal quality. The band gap of PbTiO{sub 3}, as determined by ellipsometric measurement, is 3.778 eV.
- OSTI ID:
- 20861125
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 12 Vol. 89; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
CRYSTAL GROWTH
ELECTRON DIFFRACTION
ELLIPSOMETRY
ENERGY GAP
EV RANGE 01-10
FERROELECTRIC MATERIALS
HYDROGEN PEROXIDE
LEAD COMPOUNDS
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
NEUTRON DIFFRACTION
OXYGEN
REFLECTION
STOICHIOMETRY
STRONTIUM TITANATES
SUBSTRATES
THIN FILMS
TWO-DIMENSIONAL CALCULATIONS