Zero-strain GaAs quantum dot molecules as investigated by x-ray diffuse scattering

Journal Article · Mon Jul 31 00:00:00 EDT 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2240114· OSTI ID:20860656

Hanke, M; Schmidbauer, M; Grigoriev, D; Schaefer, P; Koehler, R; Metzger, T H; Wang, Zh M; Mazur, Yu I; Salamo, G J ^[1]

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1. Martin-Luther-Universitaet Halle-Wittenberg, Fachbereich Physik, Hoher Weg 8, D-06120 Halle/Saale (Germany)

The authors report on x-ray diffuse scattering at nominally strain-free GaAs(001) quantum dot molecules (QDMs). Al{sub 0.3}Ga{sub 0.7}As deposited by molecular beam epitaxy on GaAs(001) acts as barrier layer between the GaAs(001) substrate and subsequently grown QDMs; the adjusted thickness of 50 nm preserves the in-plane lattice parameter. Pairs of lenselike quantum dots are created with preferential orientation along [110] placed on shallow hills. Grazing incidence diffraction along with kinematical scattering simulations indicate completely strain-free QDs which prove a strongly suppressed intermixing between QDMs and the underlying AlGaAs barrier layer.

• OSTI ID: 20860656
• Journal Information: Applied Physics Letters, Vol. 89, Issue 5; Other Information: DOI: 10.1063/1.2240114; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
CRYSTAL GROWTH
DIFFUSE SCATTERING
GALLIUM ARSENIDES
GRAIN ORIENTATION
LATTICE PARAMETERS
MOLECULAR BEAM EPITAXY
MOLECULES
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
SIMULATION
SUBSTRATES
TEXTURE
X-RAY DIFFRACTION