InGaAs quantum dot molecules around self-assembled GaAs nanomound templates
- Physics Department, University of Arkansas, Fayetteville, Arkansas 72701 (United States)
Several distinctive self-assembled InGaAs quantum dot molecules (QDMs) are studied. The QDMs self-assemble around nanoscale-sized GaAs moundlike templates fabricated by droplet homoepitaxy. Depending on the specific InAs monolayer coverage, the number of QDs per GaAs mound ranges from two to six (bi-QDMs to hexa-QDMs). The Ga contribution from the mounds is analyzed in determining the morphologies of the QDMs, with respect to the InAs coverages ranging between 0.8 and 2.4 ML. Optical characterization shows that the resulting nanostructures are high-quality nanocrystals.
- OSTI ID:
- 20880148
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 20 Vol. 89; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Optical detection of asymmetric quantum-dot molecules in double-layer InAs/GaAs structures
Persistent template effect in InAs/GaAs quantum dot bilayers
Origins of interlayer formation and misfit dislocation displacement in the vicinity of InAs/GaAs quantum dots
Journal Article
·
Sat Jan 14 23:00:00 EST 2006
· Semiconductors
·
OSTI ID:21088609
Persistent template effect in InAs/GaAs quantum dot bilayers
Journal Article
·
Tue Jun 15 00:00:00 EDT 2010
· Journal of Applied Physics
·
OSTI ID:21476285
Origins of interlayer formation and misfit dislocation displacement in the vicinity of InAs/GaAs quantum dots
Journal Article
·
Mon Jul 21 00:00:00 EDT 2014
· Applied Physics Letters
·
OSTI ID:22311143