Laterally Aligned GaAs Quantum Dot Molecules Grown by Droplet Epitaxy
Journal Article
·
· AIP Conference Proceedings
- Quantum Dot Research Center, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047 (Japan)
- Department of Physics, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8551 (Japan)
Laterally aligned, unstrained GaAs/AlGaAs quantum dot molecules (QDMs) are created by droplet epitaxy, utilizing the anisotropic surface potentials of the GaAs (100) surface for the migration of Ga adatoms. Single QDM photoluminescence spectra show a doublet structure, for which effective mass approximation calculations (including the size of the QDM) suggest it originates from molecular orbital energy levels in the QDM.
- OSTI ID:
- 21055040
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 893; ISSN APCPCS; ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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